ADVANCED CERAMICS INC’S "PAD" (Pressure Assisted Densification) Aluminum Nitride (AlN) is processed to be fully dense, and is characterized as having good thermal conductivity, controlled electrical resistivity and a high dielectric constant. ADVANCD CERAMICS manufactures five grades of AIN to a diameter of 600mm for a variety of different applications especially in the semiconductor industry.

AlN is non-toxic and makes an attractive alternate for applications where beryllium oxide (BeO) is used/considered. Additionally, AlN is resistant to molten aluminum, gallium, iron, nickel, molybdenum, silicon flourine and boron. The following chart lists typical properties:

	Grade of "PAD" AlN		Armor	SC-1	HP	HTC
	Bulk Density (min)	g/cmˆ3	3.25	3.25	3.25	3.30
	Average Grain Size	µm	5-8	2-5	2-5	4-6
	Flexural Strength, (4-Pt MOR) @RT	Ksi MPa	45 310	61 380	57 420	70 420
	Characteristic Strength	MPa	325	420	440	440
	Weibull Modulus (m)		11	12	12	12
	Elastic Modulus (E)	GPa	330	330	330	330
	Poisson's Ratio (n)		0.24	0.23	0.23	0.23
	Hardness (Knoop 0.3 kg)	kg/mmˆ2	1100	1100	1150	1100
	Fracture Toughness (Chevron Notch)	MPa-mˆ1/2	3.0	2.8	2.9	3.3
	Thermal Expansion (RT-1000° C)	10ˆ-6/°C	5.2	5.0	5.5	5.5
	Thermal Conductivity @RT	(W/m-K)	80 min.	80 min.	80 min.	150-170
	Dielectric Constant	1MHz	9	9	8.5	-
	Loss Tangent		0.00029	0.00032	0.00049	-

Continued